Polarization Dependence of Photocurrent in Quantum-Dot Infrared Photodetectors

Modeling of High Temperature GaN Quantum Dot Infrared Photodetectors

In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...

Increased normal incidence photocurrent in quantum dot infrared photodetectors

Effects of electron correlation on the photocurrent in quantum dot infrared photodetectors

The effect of electron correlation on the photocurrent of self-assembled InAs/InGaAs quantum dot infrared photo-detector (QDIPs) is studied. It is found that Coulomb interaction and level mixing in the many-body open system lead to double peaks associated with the intra-band transitions involving two lowest levels of the quantum dot. Furthermore, the photocurrent is a nonlinear function of the ...

Insight into performance of quantum dot infrared photodetectors

In the paper, an algorithm for theoretical evaluation of dark and illumination characteristics of quantum dot infrared photodetectors (QDIPs) is presented. The developed algorithm is based on a model previously published by Ryzhii and co-workers. In our considerations it is assumed that both thermionic emission and field-assisted tunnelling mechanisms determine the dark current of quantum dot d...

Normal incidence InAsÕAlxGa1ÀxAs quantum dot infrared photodetectors with undoped active region

We have performed a comprehensive investigation of n-type quantum dot infrared photodetectors ~QDIPs! based on InAs/GaAs epitaxical island quantum dots ~QDs! grown via the innovative punctuated island growth technique. The structural properties of the QDs were investigated with cross-sectional transmission electron microscopy and atomic force microscopy. The electronic properties of the QDs ins...